apr . 20 1 7 . version 1 . 0 magnachip semiconductor ltd . 1 MBF15T65PEH 650v fieldstop trench igbt datasheet package outl ine and s ymbol maximum rating s parameter symbol rating unit collector - e mitter v oltage v ce 65 0 v dc collector current, limited by t vj max t c =25 c i c 30 a t c =100 c 15 a pulsed c ollector cu rren t, t p limited by t vj max i c puls 60 a diode f orward c u rrent , limited by t vj max t c =25 c i f 30 a t c =100 c 15 diode pulsed c urrent , t p limited by t vj max i f puls 60 a gate - e mitter v oltage v g e 2 0 v p ower d issipation t c =25 c p d 4 8 w t c =100 c 2 4 w short c ircuit w ithstand t ime v c c 36 0v, v ge = 15v, t vj = 1 50 c t sc 5 s operating junction t emperature r ange t vj - 40 ~ 1 75 c storage temperature range t stg - 55~1 50 c thermal characteristic s parameter symbol rating unit thermal r esistance j unction - to - a mbient r th(j - a) 62 c /w th ermal r esistance j unction - to - c ase for igbt r th(j - c) 3. 0 thermal r esistance j unction - to - c ase for diode r th(j - c) 5. 0 MBF15T65PEH 650v field stop igbt features ? high ruggedness for motor control ? v ce(sat) positive temperature coefficient ? very soft, fast recovery anti - parallel diode ? low emi ? maximum junction temperature 175 c applications ? inverter for motor control general description th is igbt is produced using advanced magnachips field stop trench igbt technology, which provides high performance, excellent quality and high ruggedne ss. this device is for motor control . t o - 220 f c g e g : gate c : collector e : emitter
apr . 20 1 7 . version 1 . 0 magnachip semiconductor ltd . 2 m bf15t65peh 650v fieldstop trench igbt datasheet ordering information p art number marking temp. range package packing rohs status m bf15 t65 peh th 15 t65 p e h - 55 ~1 50 c to - 2 20f tube halo gen free electrical characteristic s ( t vj = 25c unless otherwise specified ) parameter symbol condition s min typ max unit static characteristic s collector - emitter breakdown voltage bv ces i c = 2ma, v ge = 0v 650 - - v collector - emitter saturation v oltage v ce(sat) i c = 15 a, v ge = 15v t vj = 25c 1 . 65 2.0 0 v t vj = 175c 1 . 9 0 diode forward voltage v f v ge = 0v, i f = 15 a t vj = 25c 1. 8 5 2.3 0 v t vj = 175c 1. 9 5 gate - emitter threshold voltage v ge(th) v ce = v ge , i c = 0.5ma 4 . 5 5 . 5 6 . 5 v zero gate voltage collector current i ces v ce = 650v, v ge = 0v, t vj = 25c - - 2 0 a gate - emitter leakage current i ges v ge = 20v, v ce = 0v - - 100 na dynamic characteristic s total g ate c harge q g v ce = 52 0v, i c = 15 a, v ge = 1 5 v - 61 nc gate - emitter c harge q ge - 11 gate - collector c harge q gc - 35 input c apacitance c i e s v ce = 25 v, v ge = 0v, f = 1 mhz - 1129 - pf output c apacitance c o e s - 57 - reverse t ransfer c apacitance c r e s - 31 - switching characteristic s turn - o n d elay t ime t d(on) v g e = 15v, v cc = 400v, i c = 15 a, r g = 10 , inductive load, t vj = 25 c - 19 - n s rise t ime t r - 27 - turn - o ff d elay t ime t d(off) - 128 - fall t ime t f - 3 2 - turn - on switching energy e on - 27 0 - j turn - off switching energy e off - 86 - total switching energy e ts - 356 - turn - o n d elay t ime t d(on) v g e = 15v, v cc = 400v, i c = 15 a, r g = 10 , inductive load, t vj = 175 c - 1 7 - n s rise t ime t r - 29 - turn - o ff d elay t ime t d(off) - 1 50 - fall t ime t f - 1 30 - turn - on switching energy e on - 342 - j turn - off switching energy e off - 288 - total switching energy e ts - 630 - reverse recovery time t rr i f = 15 a, di f /dt = 2 00a/ s, t vj = 25 c - 150 - n s reverse recovery current i rr - 5.2 - a reverse recovery charge q rr - 390 - nc reverse recovery time t rr i f = 15 a, di f / dt = 2 00a/ s, t vj = 175 c - 207 - n s reverse recovery current i rr - 6.1 - a reverse recovery charge q rr - 631 - nc
apr . 20 1 7 . version 1 . 0 magnachip semiconductor ltd . 3 m bf15t65peh 650v fieldstop trench igbt datasheet
apr . 20 1 7 . version 1 . 0 magnachip semiconductor ltd . 4 m bf15t65peh 650v fieldstop trench igbt datasheet
apr . 20 1 7 . version 1 . 0 magnachip semiconductor ltd . 5 m bf15t65peh 650v fieldstop trench igbt datasheet
apr . 20 1 7 . version 1 . 0 magnachip semiconductor ltd . 6 m bf15t65peh 650v fieldstop trench igbt datasheet
apr . 20 1 7 . version 1 . 0 magnachip semiconductor ltd . 7 m bf15t65peh 650v fieldstop trench igbt datasheet package outline dimension to - 220f
apr . 20 1 7 . version 1 . 0 magnachip semiconductor ltd . 8 m bf15t65peh 650v fieldstop trench igbt datasheet disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be ex pected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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